document number: 94103 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 08-jul-08 1 fast soft recovery rectifier diode, 40 a 40epf..pbf soft recovery series vishay high power products features/description the 40epf..pbf fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop . the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. this product series has been designed and qualified for industrial level and lead (pb)-free. applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where se vere restrictions on conducted emi should be met product summary v f at 20 a < 1.25 v t rr 95 ns v rrm 1000/1200 v base common cathode 2 13 cathode anode to-247ac modified a v aila b le p b -free rohs* compliant major ratings and characteristics symbol characteristics values units v rrm 1000/1200 v i f(av) sinusoidal waveform 40 a i fsm 475 t rr 1 a, 100 a/s 95 ns v f 20 a, t j = 25 c 1.25 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 40EPF10PBF 1000 1100 10 40epf12pbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 105 c, 180 conduction half sine wave 40 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 400 10 ms sine pulse, no voltage reapplied 475 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 800 a 2 s 10 ms sine pulse, no voltage reapplied 1131 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 11 310 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94103 2 revision: 08-jul-08 40epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 40 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 40 a, t j = 25 c 1.4 v forward slope resistance r t t j = 125 c 6.82 m threshold voltage v f(to) 0.94 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 10 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 apk 25 a/s 25 c 450 ns reverse recovery current i rr 6a reverse recovery charge q rr 1.8 c snap factor s 0.5 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.6 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (ibf in) maximum 12 (10) marking device case style to-247ac modified (jedec) 40epf10 40epf12
document number: 94103 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 08-jul-08 3 40epf..pbf soft recovery series fast soft recovery rectifier diode, 40 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward powe r loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 0 15 maximum allowable case temperature (c) average forward current (a) 10 520 25 30 35 40 45 60 70 8 0 90 100 110 120 130 140 150 60 30 90 1 8 0 40epf.. series r thjc (dc) = 0.6 c/ w 120 cond u ction angle ? 0 maximum allowable case temperature (c) average forward current (a) 30 10 20 40 50 60 70 60 70 8 0 90 100 110 120 130 140 150 40epf.. series r thjc (dc) = 0.6 c/ w ? cond u ction period 30 60 dc 90 120 1 8 0 0 0 maximum average forward power loss (w) average forward current (a) 20 25 30 35 40 45 10 15 5 10 20 30 40 50 60 70 rms limit 1 8 0 120 90 60 30 cond u ction angle 40epf.. series t j = 150 c ? maximum average forward power loss (w) average forward current (a) 0 0 203040506070 10 10 20 30 40 50 60 70 8 0 90 rms limit ? cond u ction period 40epf.. series t j = 150 c dc 1 8 0 120 90 60 30 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 100 150 200 250 300 350 400 450 initial t j = 150 c at 60 hz 0.00 8 3 s at 50 hz 0.0100 s at any rated load condition and w ith rated v rrm applied follo w ing s u rge. 40epf.. series 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 100 150 200 250 300 350 400 450 500 initial t j = 150 c n o v oltage reapplied rated v rrm reapplied maxim u m non-repetiti v e s u rge c u rrent v ers u s p u lse train d u ration. 40epf.. series
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94103 4 revision: 08-jul-08 40epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 40 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 100 1 01234 6 instantaneous forward current (a) instantaneous forward voltage (v) 40epf.. series t j = 25 c t j = 150 c 5 040 8 0 120 160 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 40epf.. series t j = 25 c i fm = 40 a i fm = 10 a i fm = 1 a i fm = 30 a i fm = 5 a 2.0 1.6 1.2 0 040 8 0 120 160 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.4 0. 8 i fm = 60 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 40epf.. series t j = 150 c 040 8 0 120 160 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 0 1 2 3 4 5 6 40epf.. series t j = 25 c i fm = 40 a i fm = 1 a i fm = 30 a i fm = 10 a i fm = 5 a 040 8 0 120 160 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 0 4 8 12 16 20 40epf.. series t j = 150 c i fm = 60 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 5 a
document number: 94103 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 08-jul-08 5 40epf..pbf soft recovery series fast soft recovery rectifier diode, 40 a vishay high power products fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 040 8 0 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 5 10 15 20 25 30 40epf.. series t j = 25 c i fm = 40 a i fm = 1 a i fm = 30 a i fm = 10 a i fm = 5 a 040 8 0 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 0 10 20 30 40 50 40epf.. series t j = 150 c i fm = 60 a i fm = 1 a i fm = 40 a i fm = 20 a i fm = 10 a i fm = 5 a 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.0 8 40epf.. series steady state v al u e (dc operation) single p u lse
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94103 6 revision: 08-jul-08 40epf..pbf soft recovery series vishay high power products fast soft recovery rectifier diode, 40 a ordering information table links to related documents dimensions http://www.vishay.com/doc?95223 part marking information http://www.vishay.com/doc?95226 1 - current rating (40 = 40 a) 2 - circuit configuration: e = single diode 3 - package: p = to-247ac modified 4 - type of silicon: f = fast diode 5 - voltage code x 100 = v rrm 6 - none = standard production pbf = lead (pb)-free 10 = 1000 v 12 = 1200 v device code 5 13 24 6 40 e p f 12 pbf
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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